1.3k citations · 5.1k across the 18 of their papers we have counts for
18 papers
Beyond Graphene: Low-Symmetry and Anisotropic 2D Materials
Salvador Barraza-Lopez, Fengnian Xia, Wenjuan Zhu +1
Low-symmetry 2D materials---such as ReS and ReSe monolayers, black phosphorus monolayers, group-IV monochalcogenide monolayers, borophene, among others---have more complex…
Layered material GeSe and vertical GeSe/MoS2 p-n heterojunctions
Wui Chung Yap, Zhengfeng Yang, Mehrshad Mehboudi +3
Group-IV monochalcogenides are emerging as a new class of layered materials beyond graphene, transition metal dichalcogenides (TMDCs), and black phosphorus (BP). In this paper, we…
Structural phase transition and material properties of few-layer monochalcogenides
Mehrshad Mehboudi, Benjamin M. Fregoso, Yurong Yang +6
GeSe and SnSe monochalcogenide monolayers and bilayers undergo a two-dimensional phase transition from a rectangular unit cell to a square unit cell at a temperature well bel…
Thermal Sublimation: a Scalable and Controllable Thinning Method for the Fabrication of Few-Layer Black Phosphorus
Weijun Luo, Rui Yang, Jialun Liu +4
In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning we…
Two-dimensional disorder in black phosphorus and monochalcogenide monolayers
Mehrshad Mehboudi, Alex M. Dorio, Wenjuan Zhu +6
Ridged, orthorhombic two-dimensional atomic crystals with a bulk {\em Pnma} structure such as black phosphorus and monochalcogenide monolayers are an exciting and novel material pl…
Graphene Side Gate Engineering
Ching-Tzu Chen, Tony Low, Hsin-Ying Chiu +1
Various mesoscopic devices exploit electrostatic side gates for their operation. In this paper, we investigate how voltage-biasing of graphene side gates modulates the electrical t…