452 citations · 1.5k across the 22 of their papers we have counts for
22 papers
Control over Berry Curvature Dipole with Electric Field in WTe2
Xing-Guo Ye, Huiying Liu, Peng-Fei Zhu +5
Berry curvature dipole plays an important role in various nonlinear quantum phenomena. However, the maximum symmetry allowed for nonzero Berry curvature dipole in the transport pla…
Orbital polarization and third-order anomalous Hall effect in WTe2
Xing-Guo Ye, Peng-Fei Zhu, Wen-Zheng Xu +3
The anomalous Hall effect (AHE) has been extended into the nonlinear regime, where the Hall voltage shows higher-order response to the applied current. Nevertheless, the microscopi…
Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4
Wen-Zheng Xu, Chun-Guang Chu, Zhen-Cun Pan +7
We report magnetotransport measurements in the NbN/ magnetic topological insulator MnBi2Te4 (MBT)/ NbN junction at low temperature. At 10 mK, the nonlinear current-voltage characte…
Exchange bias in van der Waals MnBiTe/CrGeTe heterostructure
Jing-Zhi Fang, Hao-Nan Cui, Shuo Wang +13
The layered van der Waals (vdW) material MnBiTe is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE)…
Topological nature of higher-order hinge states revealed by spin transport
An-Qi Wang, Peng-Zhan Xiang, Tong-Yang Zhao +1
One-dimensional (1D) gapless hinge states are predicated in the three-dimensional (3D) higher-order topological insulators and topological semimetals, because of the higher-order b…
Intermediate anomalous Hall states induced by noncollinear spin structure in magnetic topological insulator MnBi2Te4
Jing-Zhi Fang, Shuo Wang, Xing-Guo Ye +12
The combination of topology and magnetism is attractive to produce exotic quantum matters, such as the quantum anomalous Hall state, axion insulators and the magnetic Weyl semimeta…
Strain-dependent resistance and giant gauge factor in monolayer WSe2
Mao-Sen Qin, Xing-Guo Ye, Peng-Fei Zhu +4
We report the strong dependence of resistance on uniaxial strain in monolayer WSe2 at various temperatures, where the gauge factor can reach as large as 2400. The observation of st…
Topological Semimetal Nanostructures: From Properties to Topotronics
An-Qi Wang, Xing-Guo Ye, Da-Peng Yu +1
Characterized by bulk Dirac or Weyl cones and surface Fermi-arc states, topological semimetals have sparked enormous research interest in recent years. The nanostructures, with lar…
Reducing electronic transport dimension to topological hinge states by increasing geometry size of Dirac semimetal Josephson junctions
Cai-Zhen Li, An-Qi Wang, Chuan Li +4
The notion of topological phases has been extended to higher-order and has been generalized to different dimensions. As a paradigm, Cd3As2 is predicted to be a higher-order topolog…
Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation
Jakub Jadwiszczak, Darragh Keane, Pierce Maguire +12
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the co…
Bulk and surface states carried supercurrent in ballistic Nb-Dirac semimetal Cd3As2 nanowire-Nb junctions
Cai-Zhen Li, Chuan Li, Li-Xian Wang +4
A three-dimensional Dirac semimetal has bulk Dirac cones in all three momentum directions and Fermi arc-like surface states, and can be converted into a Weyl semimetal by breaking…
Gate-tuned Aharonov-Bohm interference of surface states in a quasi-ballistic Dirac semimetal nanowire
Ben-Chuan Lin, Shuo Wang, Li-Xian Wang +4
We report an observation of a topologically protected transport of surface carriers in a quasi-ballistic Cd3As2 nanowire.The nanowire is thin enough for the spin-textured surface c…
Topological transport in Dirac electronic systems: A concise review
Hua-Ding Song, Dian Sheng, An-Qi Wang +3
Various novel physical properties have emerged in Dirac electronic systems, especially the topological characters protected by symmetry. Current studies on these systems have been…
Evidence for topological proximity effect in graphene coupled to topological insulator
Liang Zhang, Ben-Chuan Lin, Yan-Fei Wu +3
The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of…
Ultrafast Broadband Photodetectors based on Three-dimensional Dirac Semimetal Cd3As2
Qinsheng Wang, Cai-Zhen Li, Shaofeng Ge +8
The efforts to pursue photo detection with extreme performance in terms of ultrafast response time, broad detection wavelength range, and high sensitivity have never been exhausted…
Ultrafast Relaxation Dynamics of Photoexcited Dirac Fermion in The Three Dimensional Dirac Semimetal Cadmium Arsenide
Wei Lu, Shaofeng Ge, Xuefeng Liu +7
Three dimensional (3D) Dirac semimetals which can be seen as 3D analogues of graphene have attracted enormous interests in research recently. In order to apply these ultrahigh-mobi…
Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates
Cai-Zhen Li, Jin-Guang Li, Li-Xian Wang +4
Cd3As2 is a model material of Dirac semimetal with a linear dispersion relation along all three directions in the momentum space. The unique band structure of Cd3As2 makes it with…
Aharonov-Bohm oscillations in Dirac semimetal Cd3As2 nanowires
Li-Xian Wang, Cai-Zhen Li, Da-Peng Yu +1
Three-dimensional Dirac semimetals, a three-dimensional analogue of graphene, are unusual quantum materials with massless Dirac fermions, which can be further converted to Weyl fer…
Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires
Cai-Zhen Li, Li-Xian Wang, Haiwen Liu +3
Cd3As2 is a newly booming Dirac semimetal with linear dispersion along all three momentum directions and can be viewed as 3D analog of graphene. As breaking of either time reversal…
Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions
Liang Zhang, Yuan Yan, Han-Chun Wu +2
Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac material…
Tailoring exciton dynamics by elastic strain-gradient in semiconductors
Xuewen Fu, Cong Su, Qiang Fu +7
As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials.…
Growth of Large Domain Epitaxial Graphene on the C-Face of SiC
Rui Zhang, Yunliang Dong, Wenjie Kong +5
Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been a…