Gate-tuned Aharonov-Bohm interference of surface states in a quasi-ballistic Dirac semimetal nanowire

Abstract

We report an observation of a topologically protected transport of surface carriers in a quasi-ballistic Cd3As2 nanowire.The nanowire is thin enough for the spin-textured surface carriers to form 1D subbands, demonstrating conductance oscillations with gate voltage even without magnetic field. The π phase-shift of Aharonov-Bohm oscillations can periodically appear or disappear by tuning gate voltage continuously. Such a π phase shift stemming from the Berry's phase demonstrates the topological nature of surface states.The topologically protected transport of the surface states is further revealed by four-terminal nonlocal measurements.

15 pages, 4 figures

References in corpus (4)

• Dirac materials
• Aharonov-Bohm oscillations in disordered topological insulator nanowires
• Anomalous Aharonov-Bohm conductance oscillations from topological insulator surface states
• Spin-charge Separated Solitons in a Topological Band Insulator

Cited by in corpus (9)

• Topological Semimetal Nanostructures: From Properties to Topotronics
• Strain-gradient induced topological transition in bent nanoribbons of the Dirac semimetal Cd3As2
• Aharonov-Bohm Effect in Three-dimensional Higher-order Topological Insulator
• Phonon-induced magnetoresistivity of Weyl semimetal nanowires
• Gate-tunable h/e-period magnetoresistance oscillations in Bi2O2Se nanowires
• Spin and charge transport through helical Aharonov-Bohm interferometer with strong magnetic impurity
• Multi higher-order Dirac and nodal line semimetals
• Tunable helical crystals
• Effective Hamiltonian of topologically protected qubit in a helical crystal