Gate-tunable h/e-period magnetoresistance oscillations in Bi2O2Se nanowires

Abstract

We report on the successful synthesis and low-temperature electron transport investigations of a new form of material - Bi2O2Se semiconducting nanowires. Gate-tunable 0- and $\pi$-h/e (h is the Planck constant and e the elementary charge) periodic resistance oscillations in longitudinal magnetic field were observed unexpectedly, demonstrating novel quasi-ballistic, phase-coherent surface states in Bi2O2Se nanowires. By reaching a very good agreement between the calculated density of states and the experimental data, we clarified the mechanism to be the one dimensional subbands formed along the circumference of the nanowire rather than the usually considered Aharonov-Bohm interference. A qualitative physical picture based on downward band bending associated with the complex band structure is proposed to describe the formation of the surface states.

arXiv commentCorrected errors in calculations. Accepted by PRB

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Cited by in corpus (3)

• Magnitude and Spatial Distribution Control of the Supercurrent in Bi2O2Se-Based Josephson Junction
• Transport study of the wormhole effect in three-dimensional topological insulators
• Bi2O2Se nanowires presenting high mobility and strong spin-orbit coupling