Lithium-ion conducting glass ceramics for electrostatic gating

Abstract

We explore solid electrolytes for electrostatic gating using field-effect transistors (FETs) in which thin WSe${}_2$ crystals are exfoliated and transferred onto a lithium-ion conducting glass ceramic substrate. For negative gate voltages ($V_G<0$) the devices work equally well as ionic liquid gated FETs while offering specific advantages, whereas no transistor action is seen for $V_G>0$. For $V_G<0$ the devices can nevertheless be driven into the ambipolar injection regime by applying a large source-drain bias, and strong electroluminescence is observed when direct band-gap WSe${}_2$ monolayers are used. Detecting and imaging the emitted light is much simpler in these FETs as compared to ionic liquid gated transistors, because the semiconductor surface is exposed (i.e., not covered by another material). Our results show that solid electrolytes are complementary to existing liquid gates, as they enable experiments not possible when the semiconductor is buried under the liquid itself.

References in corpus (11)

• Gate-tunable Phase Transitions in 1T-TaS${}_2$
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors
• High Mobility WSe2 p- and n-Type Field Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Accessing the transport properties of graphene and its multi-layers at high carrier density
• Electric field induced strong enhancement of electroluminescence in multi-Layer MoS2
• Electrostatically Induced Superconductivity at the Surface of WS${}_2$
• Hall and field-effect mobilities in few layered $p$-WSe${}_2$ field-effect transistors
• Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS2

Cited by in corpus (4)

• Quenching the band gap of 2D semiconductors with a perpendicular electric field
• Full control of solid-state electrolytes for electrostatic gating
• Robust anomalous metallic states and vestiges of self duality in two-dimensional granular In-InOx composites
• Identifying atomically thin crystals with diffusively reflected light