Identifying atomically thin crystals with diffusively reflected light
arXiv:2106.12419 · doi:10.1088/2053-1583/ac171c
Abstract
The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become available, together with techniques enabling their assembly into functional heterostructures. The strategy to detect these atomically thin crystals has however remained unchanged since the discovery of graphene. Such an absence of evolution is starting to pose problems because for many of the 2D materials of current interest the optical contrast provided by the commonly used detection procedure is insufficient to identify the presence of individual monolayers or to determine unambiguously the thickness of atomically thin multilayers. Here we explore an alternative detection strategy, in which the enhancement of optical contrast originates from the use of optically inhomogeneous substrates, leading to diffusively reflected light. Owing to its peculiar polarization properties and to its angular distribution, diffusively reflected light allows a strong contrast enhancement to be achieved through the implementation of suitable illumination-detection schemes. We validate this conclusion by carrying out a detailed quantitative analysis of optical contrast, which fully reproduces our experimental observations on over 60 WSe mono-, bi-, and trilayers. We further validate the proposed strategy by extending our analysis to atomically thin phosphorene, InSe, and graphene crystals. Our conclusion is that the use of diffusively reflected light to detect and identify atomically thin layers is an interesting alternative to the common detection scheme based on Fabry-Perot interference, because it enables atomically thin layers to be detected on substrates others than the commonly used Si/SiO, and it may offer higher sensitivity depending on the specific 2D material considered.
References in corpus (29)
- Electric Field Effect in Atomically Thin Carbon Films
- Atomically thin MoS2: A new direct-gap semiconductor
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
- Making graphene visible
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Hunting for Monolayer Boron Nitride: Optical and Raman Signatures
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Tunable metal-insulator transition in double-layer graphene heterostructures
- Tunneling spin valves based on FeGeTe/hBN/FeGeTe van der Waals heterostructures
- Visibility of dichalcogenide nanolayers
- Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy
- Simple approach for high-contrast optical imaging and characterization of graphene-based sheets
- Optical identification of atomically thin dichalcogenide crystals
- Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
- Transport through graphene on SrTiO3
- Graphene/-RuCl: An Emergent 2D Plasmonic Interface
- Sign reversing Hall effect in atomically thin high temperature superconductors
- Modulation Doping via a 2d Atomic Crystalline Acceptor
- Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
- Thickness identification of thin InSe by optical microscopy methods
- Semiconducting van der Waals Interfaces as Artificial Semiconductors
- Lithium-ion conducting glass ceramics for electrostatic gating
- Synthetic Semimetals with van der Waals Interfaces