161 citations · 329 across the 12 of their papers we have counts for
12 papers
Electrostatic control of Li+ density and transport rate in double-gated van der Waals devices
E. Hoenig, X. Zhang, C. Li +7
Ion transport in crystalline hosts is controlled by an applied potential that simultaneously sets ionic distribution and transport rate, restricting operation to a one-dimensional…
Deep-UV bleaching of charge disorder in encapsulated graphene
Daniil Domaretskiy, Ned Hayward, Van Huy Nguyen +11
Disorder masks much of the rich physics in two-dimensional electronic systems, with charged impurities often the limiting factor. In graphene, progress in reducing disorder has lar…
Layer-selective hydrogenation and proton transport in twisted bilayer graphene
J. Tong, G. Chen, H. Li +13
Recent work investigated graphene's hydrogenation with independent control of the electric field, E, and charge density, n, in the crystal and showed that the process is controlled…
Proximity screening greatly enhances electronic quality of graphene
Daniil Domaretskiy, Zefei Wu, Van Huy Nguyen +17
The electronic quality of two-dimensional systems is crucial when exploring quantum transport phenomena. In semiconductor heterostructures, decades of optimization have yielded rec…
In-plane staging in lithium-ion intercalation of bilayer graphene
Thomas Astles, James G. McHugh, Rui Zhang +11
The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been…
Control of proton transport and hydrogenation in double-gated graphene
J. Tong, Y. Fu, D. Domaretskiy +12
The basal plane of graphene can function as a selective barrier that is permeable to protons but impermeable to all ions and gases, stimulating its use in applications such as memb…
Full control of solid-state electrolytes for electrostatic gating
Chuanwu Cao, Margherita Melegari, Marc Philippi +4
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-elect…
Light sources with bias tunable spectrum based on van der Waals interface transistors
Hugo Henck, Diego Mauro, Daniil Domaretskiy +13
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Control…
Quenching the band gap of 2D semiconductors with a perpendicular electric field
Daniil Domaretskiy, Marc Philippi, Marco Gibertini +3
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally sho…
Identifying atomically thin crystals with diffusively reflected light
D. Domaretskiy, N. Ubrig, I. Gutiérrez-Lezama +2
The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become avai…
Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak +14
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into int…
The formation of long-lived high-correlated states of light and polarization in high-quality semiconductor microcavity at the resonant laser excitation
Andrey Demenev, Sergei Novikov, Daniil Domaretskiy +2
The correlation function of radiation from a high-quality semiconductor microcavity at the resonant laser excitation demonstrates oscillations with surprisingly long-period and dam…