621 citations · 1.7k across the 30 of their papers we have counts for
31 papers
Switchable giant room-temperature nonlinear Hall effect in Bilayer Graphene
Margherita Melegari, Ignacio Gutiérrez-Lezama, Justin C. W. Song +1
Utilizing quantum second-order nonlinear transport for practical junction-free devices require materials with large and tunable nonlinearites at room temperature -- a current mater…
Electron-phonon coupling across the TMD/hBN van der Waals interface
G. Gatti, C. Berthod, J. Issing +18
Many-body interactions can couple electronic states in one layer with collective excitations in the adjacent layer, providing a route to tailor properties of heterostructures. Howe…
Interband State Transfer in Double-Gated Bilayer Graphene at High Electric Field
Margherita Melegari, Brian Skinner, Ignacio Gutierrez-Lezama +1
The band structure of Bernal-stacked bilayer graphene can be tuned using double-gated transistors to apply a perpendicular electric field that generates an interlayer potential ene…
Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors
Fengrui Yao, Menghan Liao, Marco Gibertini +7
Antiferromagnetic conductors with suitably broken spatial symmetries host spin-polarized bands, which lead to transport phenomena commonly observed in metallic ferromagnets. In bul…
Spin valve effect in junctions with a single ferromagnet
Fengrui Yao, Volodymyr Multian, Kenji Watanabe +3
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magn…
Moire magnetism in CrBr3 multilayers emerging from differential strain
Fengrui Yao, Dario Rossi, Ivo A. Gabrovski +8
Interfaces between twisted 2D materials host a wealth of physical phenomena originating from the long-scale periodicity associated with the resulting moire structure. Besides twist…
Positive oscillating magnetoresistance in a van der Waals antiferromagnetic semiconductor
Xiaohanwen Lin, Fan WU, Nicolas Ubrig +4
In all van der Waals layered antiferromagnetic semiconductors investigated so far a negative magnetoresistance has been observed in vertical transport measurements, with characteri…
Influence of magnetism on vertical hopping transport in CrSBr
Xiaohanwen Lin, Fan Wu, Sara A. Lopéz-Paz +4
We investigate the c-direction conduction in CrSBr in the linear regime, not accessible in other van der Waals (vdW) magnetic semiconductors, because of the unmeasurably low curren…
Electronic structure of few-layer black phosphorus from -ARPES
Florian Margot, Simone Lisi, Irène Cucchi +13
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band str…
Full control of solid-state electrolytes for electrostatic gating
Chuanwu Cao, Margherita Melegari, Marc Philippi +4
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top-elect…
Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS
Fan Wu, Marco Gibertini, Kenji Watanabe +4
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic…
Determining spin-orbit coupling in graphene by quasiparticle interference imaging
Lihuan Sun, Louk Rademaker, Diego Mauro +7
Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a…
Band Gap Opening in Bilayer Graphene-CrCl/CrBr/CrI van der Waals Interfaces
Giulia Tenasini, David Soler-Delgado, Zhe Wang +10
We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge t…
Quasi 1D electronic transport in a 2D magnetic semiconductor
Fan Wu, Ignacio Gutiérrez-Lezama, Sara A. Lopéz-Paz +6
We investigate electronic transport through exfoliated multilayers of CrSBr, a 2D semiconductor that is attracting attention because of its magnetic properties. We find an extremel…
Light sources with bias tunable spectrum based on van der Waals interface transistors
Hugo Henck, Diego Mauro, Daniil Domaretskiy +13
Light-emitting electronic devices are ubiquitous in key areas of current technology, such as data communications, solid-state lighting, displays, and optical interconnects. Control…
Quenching the band gap of 2D semiconductors with a perpendicular electric field
Daniil Domaretskiy, Marc Philippi, Marco Gibertini +3
The electronic band structure of atomically thin semiconductors can be tuned by the application of a perpendicular electric field. The principle was demonstrated experimentally sho…
Magnetization dependent tunneling conductance of ferromagnetic barriers
Zhe Wang, Ignacio Gutiérrez-Lezama, Dumitru Dumcenco +6
Recent experiments on van der Waals antiferrmagnets such as CrI3, CrCl3 and MnPS3 have shown that using atomically thin layers as tunnel barriers and measuring the temperature (…
Identifying atomically thin crystals with diffusively reflected light
D. Domaretskiy, N. Ubrig, I. Gutiérrez-Lezama +2
The field of two-dimensional materials has been developing at an impressive pace, with atomically thin crystals of an increasing number of different compounds that have become avai…
Ionic Gate Spectroscopy of 2D Semiconductors
Ignacio Gutiérrez-Lezama, Nicolas Ubrig, Evgeniy Ponomarev +1
Reliable and precise measurements of the relative energy of band edges in semiconductors are needed to determine band gaps and band offsets, as well as to establish the band diagra…
Synthetic Semimetals with van der Waals Interfaces
Bojja Aditya Reddy, Evgeniy Ponomarev, Ignacio Gutiérrez-Lezama +4
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply…
Design of van der Waals Interfaces for Broad-Spectrum Optoelectronics
Nicolas Ubrig, Evgeniy Ponomarev, Johanna Zultak +14
Van der Waals (vdW) materials offer new ways to assemble artificial electronic media with properties controlled at the design stage, by combining atomically defined layers into int…
Multi-frequency Shubnikov-de Haas oscillations in topological semimetal PtHgSe
Diego Mauro, Hugo Henck, Marco Gibertini +4
Monolayer jacutingaite (PtHgSe) has been recently identified as a candidate quantum spin Hall system with a 0.5 eV band gap, but no transport measurements have been perform…
Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer
Jose Martinez-Castro, Diego Mauro, Árpád Pásztor +4
Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if th…
Microfocus laser-ARPES on encapsulated mono-, bi-, and few-layer 1T'-WTe
Irène Cucchi, Ignacio Gutiérrez-Lezama, Edoardo Cappelli +11
Two-dimensional crystals of semimetallic van der Waals materials hold much potential for the realization of novel phases, as exemplified by the recent discoveries of a polar metal…