Band Gap Opening in Bilayer Graphene-CrCl${}_3$/CrBr${}_3$/CrI${}_3$ van der Waals Interfaces

Abstract

We report experimental investigations of transport through bilayer graphene (BLG)/chromium trihalide (CrX${}_3$; X=Cl, Br, I) van der Waals interfaces. In all cases, a large charge transfer from BLG to CrX${}_3$ takes place (reaching densities in excess of $10^{13}$ cm${}^{-2}$), and generates an electric field perpendicular to the interface that opens a band gap in BLG. We determine the gap from the activation energy of the conductivity and find excellent agreement with the latest theory accounting for the contribution of the $\sigma$ bands to the BLG dielectric susceptibility. We further show that for BLG/CrCl${}_3$ and BLG/CrBr${}_3$ the band gap can be extracted from the gate voltage dependence of the low-temperature conductivity, and use this finding to refine the gap dependence on the magnetic field. Our results allow a quantitative comparison of the electronic properties of BLG with theoretical predictions and indicate that electrons occupying the CrX${}_3$ conduction band are correlated.

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• Gate control of 2D magnetism in tri- and four-layers $\mathrm{Cr}{\mathrm{I}}_3$/graphene heterostructures
• Spin and Valley Polarized Multiple Fermi Surfaces of α-RuCl${}_3$/Bilayer Graphene Heterostructure
• Effects of different 3D QED vertex ansaetze on critical coupling