Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS
arXiv:2301.10535 · doi:10.1002/adma.202211653
Abstract
Using field-effect transistors (FETs) to explore atomically thin magnetic semiconductors with transport measurements is difficult, because the very narrow bands of most 2D magnetic semiconductors cause carrier localization, preventing transistor operation. Here, we show that exfoliated layers of CrPS -- a 2D layered antiferromagnetic semiconductor whose bandwidth approaches 1 eV -- allow the realization of FETs that operate properly down to cryogenic temperature. Using these devices, we perform conductance measurements as a function of temperature and magnetic field, to determine the full magnetic phase diagram, which includes a spin-flop and a spin-flip phase. We find that the magnetoconductance depends strongly on gate voltage, reaching values as high as 5000 % near the threshold for electron conduction. The gate voltage also allows the magnetic states to be tuned, despite the relatively large thickness of the CrPS multilayers employed in our study. Our results show the need to employ 2D magnetic semiconductors with sufficiently large bandwidth to realize properly functioning transistors, and identify a candidate material to realize a fully gate-tunable half-metallic conductor.
Accepted for publication in Advanced Materials
References in corpus (13)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- A Higher-Accuracy van der Waals Density Functional
- Magnetic 2D materials and heterostructures
- Interlayer Electronic Coupling on Demand in a 2D Magnetic Semiconductor
- Tailoring Magnetic Anisotropy in CrGeTe by Electrostatic Gating
- VI3 - a new layered ferromagnetic semiconductor
- Spin-flop transition in atomically thin MnPS crystals
- Determining the phase diagram of atomically thin layered antiferromagnet CrCl
- Quasi 1D electronic transport in a 2D magnetic semiconductor
- Magnetic structure and exchange interactions in the layered semiconductor CrPS4
- Magnetic order in van der Waals antiferromagnet CrPS4: anisotropic H-T phase diagrams and effects of pressure
- Probing magnetism in exfoliated VI layers with magnetotransport
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