Magnetism-induced band-edge shift as mechanism for magnetoconductance in CrPS${}_4$ transistors

Abstract

Transistors realized on 2D antiferromagnetic semiconductor CrPS${}_4$ exhibit large magnetoconductance, due to magnetic-field-induced changes in magnetic state. The microscopic mechanism coupling conductance and magnetic state is not understood. We identify it by analyzing the evolution of the parameters determining the transistor behavior -- carrier mobility and threshold voltage -- with temperature and magnetic field. For temperatures T near the Néel temperature $T_N$, the magnetoconductance originates from a mobility increase due to the applied magnetic field that reduces spin fluctuation induced disorder. For $T<<T_N$, instead, what changes is the threshold voltage, so that increasing the field at fixed gate voltage increases the density of accumulated electrons. The phenomenon is explained by a conduction band-edge shift correctly predicted by \emph{ab-initio} calculations. Our results demonstrate that the bandstructure of CrPS${}_4$ depends on its magnetic state and reveal a mechanism for magnetoconductance that had not been identified earlier.

References in corpus (7)

• Magnetic 2D materials and heterostructures
• VI3 - a new layered ferromagnetic semiconductor
• Quasi 1D electronic transport in a 2D magnetic semiconductor
• Moiré skyrmions and chiral magnetic phases in twisted CrX${}_3$ (X $=$ I, Br, Cl) bilayers
• Magnetic structure and exchange interactions in the layered semiconductor CrPS4
• Gate-controlled Magnetotransport and Electrostatic Modulation of Magnetism in 2D magnetic semiconductor CrPS${}_4$
• Probing magnetism in exfoliated VI${}_3$ layers with magnetotransport

Cited by in corpus (6)

• Switching on and off the spin polarization of the conduction band in antiferromagnetic bilayer transistors
• Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS${}_4$
• Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4
• Brightened Optical Transition as Indicator of Multiferroicity in a Layered Antiferromagnet
• Tunable linear and nonlinear anomalous Hall transport in two-dimensional CrPS${}_4$
• Room Temperature Anisotropic Photoresponse in Low-Symmetry van der Waals Semiconductor CrPS${}_4$