Nonvolatile Electric Control of Antiferromagnet CrSBr

Abstract

van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200 % change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.

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Cited by in corpus (6)

• Roadmap for Photonics with 2D Materials
• Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
• Anomalous Nonlinear Magnetoconductivity in van der Waals Magnet CrSBr
• Ferromagnetism above 200 K in organic-ion intercalated CrSBr
• Magnetically Modulated Electrical Switching in an Antiferromagnetic Transistor
• A new helical InSeI polymorph: crystal structure and polarized Raman spectroscopy study