Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
arXiv:2504.09920 · doi:10.1002/adma.202506695
Abstract
Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile strategy to control magnetism at the two-dimensional (2D) limit. Here, we demonstrate that compressive biaxial strain significantly enhances the magnetoresistance and magnetic anisotropy of few-layer CrSBr flakes. Strain is efficiently transferred to the flakes from the thermal compression of a polymeric substrate upon cooling, as confirmed by temperature-dependent Raman spectroscopy. This strain induces a remarkable increase in the magnetoresistance ratio and in the saturation fields required to align the magnetization of CrSBr along each of its three crystalographic directions, reaching a twofold enhancement along the magnetic easy axis. This enhancement is accompanied by a subtle reduction of the Néel temperature by ~10K. Our experimental results are fully supported by first-principles calculations, which link the observed effects to a strain-driven modification in interlayer exchange coupling and magnetic anisotropy energy. These findings establish strain engineering as a key tool for fine-tuning magnetotransport properties in 2D magnetic semiconductors, paving the way for implementation in spintronics and information storage devices.
References in corpus (21)
- Magnetic 2D materials and heterostructures
- Ising-Type Magnetic Ordering in Atomically Thin FePS3
- TB2J: a python package for computing magnetic interaction parameters
- A strain tunable single-layer MoS2 photodetector
- Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr
- Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
- The bulk van der Waals layered magnet CrSBr is a quasi-1D material
- Triaxial magnetic anisotropy in the two-dimensional ferromagnetic semiconductor CrSBr
- Quasi 1D electronic transport in a 2D magnetic semiconductor
- Probing defects and spin-phonon coupling in CrSBr via resonant Raman scattering
- Raman scattering signatures of the strong spin-phonon coupling in the bulk magnetic van der Waals material CrSBr
- Controllable dimensionality conversion between 1D and 2D CrCl3 magnetic nanostructures
- Designing magnetic properties in CrSBr through hydrostatic pressure and ligand substitution
- Nonvolatile Electric Control of Antiferromagnet CrSBr
- Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer
- Raman Polarization Switching in CrSBr
- Roadmap on Quantum Magnetic Materials
- Engineering robust strain transmission in van der Waals heterostructure devices
- Anomalous Tunneling Magnetoresistance Oscillation and Electrically Tunable Tunneling Anisotropic Magnetoresistance in Few-layer CrPS4
- Strain-induced interlayer magnetic coupling spike of two-dimensional van der Waals material FeGeTe
- Magnetic Correlation Spectroscopy in CrSBr