Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer

Abstract

Two-dimensional (2D) magnetoelectric multiferroics are promising multifunctional materials for miniaturized logic and memory devices. Herein, we explore the effectiveness of strain-engineering for tuning the properties of a recently predicted 2D antiferromagnetic-ferroelectric, VOCl2 monolayer. Interestingly, we find that magnetic-ordering and electric polarization can be tuned independently using uniaxial tensile strain along different in-plane lattice vectors. A 4% tensile strain along lattice vector b induces a transition from an antiferromagnetic (AFM) ground state with an out-of-plane magnetization to a ferromagnetic (FM) ground state with in-plane magnetization. On the other hand, tensile strain along lattice vector a enhances spontaneous electric polarization, without affecting the magnetic ordering. The monolayers remain dynamically stable under tensile strain, which further helps to raise the Curie temperature of ferromagnetism, as well as ferroelectricity. Such a strain-tunable multiferroic material holds great promises for future generation nanoelectronic devices.

References in corpus (20)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
• Van der Waals Density Functional for General Geometries
• Van der Waals density functionals applied to solids
• A Higher-Accuracy van der Waals Density Functional
• Physics of thin-film ferroelectric oxides
• Efficient implementation of a van der Waals density functional: Application to double-wall carbon nanotubes
• Multiferroic materials and magnetoelectric physics: symmetry, entanglement, excitation, and topology
• Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
• Discovery of Intrinsic Ferromagnetic Ferroelectricity in Transition Metal Halides Monolayer
• Type-II multiferroic Hf${}_2$VC${}_2$F${}_2$ MXene monolayer with high transition temperature
• Comparative first-principles studies of prototypical ferroelectric materials by LDA, GGA, and SCAN meta-GGA
• Two-Dimensional Multiferroic Semiconductors with Coexisting Ferroelectricity and Ferromagnetism
• Two-Dimensional Hyperferroelectric Metals: a Different Route to Ferromagnetic-Ferroelectric Multiferroics
• Two-dimensional ferromagnetic-ferroelectric multiferroics in violation of the d0 rule
• Ferroelectricity in corundum derivatives
• Ferroelectricity and ferromagnetism in VOI${}_2$ monolayer: the role of Dzyaloshinskii-Moriya interaction
• Prediction of two-dimensional ferromagnetic ferroelectric VOF${}_2$ monolayer
• A brief account of the Ising and Ising-like models: Mean-field, effective-field and exact results
• Interplay between chemical order and magnetic properties in L1${}_0$ FeNi (tetrataenite): A First-Principles Study

Cited by in corpus (3)

• Prediction of Magnetoelectric Multiferroic Janus Monolayers VOXY(X/Y = F, Cl, Br, or I, and X$\ne$Y) with in-plane ferroelectricity and out-of-plane piezoelectricity
• Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
• Room Temperature Ferroelectricity and Electrically Tunable Berry Curvature Dipole in III-V Monolayers