Prediction of two-dimensional ferromagnetic ferroelectric VOF${}_2$ monolayer

Abstract

Nowadays, designing and searching for materials with multiple functional characteristics are the key to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be applied in highly-integrated magnetoelectric devices, such as high-density non-volatile memories. Here, we predict a two-dimensional material VOF2 monolayer to possess intrinsic ferroelectric and ferromagnetic properties. The VOF${}_2$ monolayer own the largest in-plane ferroelectric polarization ($332$ pC/m) in the family of VO$X_2$ ($X$: halogen) oxyhalides. Different from other VO$X_2$ monolayers whose magnetic ground states are antiferromagnetic or noncollinear spiral textures, the VOF${}_2$ monolayer owns a robust ferromagnetic ground state, which is rare but highly desirable. Our theoretical prediction provides a good candidate and starting point for the further pursuit of more two-dimensional multiferroic materials with high-performance magnetoelectricity.

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Cited by in corpus (13)

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• Gadolinium halide monolayers: a fertile family of two-dimensional 4f magnets
• Decoupled Strain Response of Ferroic Properties in Multiferroic VOCl2 Monolayer
• Prediction of Magnetoelectric Multiferroic Janus Monolayers VOXY(X/Y = F, Cl, Br, or I, and X$\ne$Y) with in-plane ferroelectricity and out-of-plane piezoelectricity
• Structural reconstruction and anisotropic conductance in $4f$-ferromagnetic monolayer
• Negative piezoelectricity in quasi-two/one-dimensional ferroelectrics
• Perspective on 2D perovskite ferroelectrics and multiferroics
• Stacking dependent ferroelectricity and antiferroelectricity in quasi-one-dimensional oxyhalides NbO$X_3$
• Magnetoelectric behavior of breathing kagomé monolayers of ${\mathrm{Nb}}_3{(\mathrm{Cl},\mathrm{Br},\mathrm{I})}_8$ from first-principles calculations
• Structural dimerization and charge-orbital ordering in a ferromagnetic semiconductor LiV2S4 monolayer