Gate-Tunable Graphene Hall Sensors with High Magnetic Field Sensitivity
arXiv:1912.12678 · doi:10.1038/s41467-020-18007-5
Abstract
Solid-state magnetic field sensors are important to both modern electronics and fundamental materials science. Many types of these sensors maintain high sensitivity only in a limited range of temperature and background magnetic field, but Hall-effect sensors are in principle able to operate over a broad range of these conditions. Here, we fabricate and characterize micrometer-scale graphene Hall sensors demonstrating high magnetic field sensitivity from liquid-helium to room temperature and in background magnetic field up to several Tesla. By tuning the charge carrier density with an electrostatic gate, we optimize the magnetic field sensitivity for different working conditions. From measurements of the Hall coefficient and the Hall voltage noise at 1 kHz, we estimate an optimum magnetic field sensitivity of 80 nT Hz at 4.2 K, 700 nT Hz at room temperature, and 3 T Hz in 3 T background magnetic field at 4.2 K. Our devices perform competitively with the best existing Hall sensor technologies at room temperature, outperform any Hall sensors reported in the literature at 4.2 K, and demonstrate high sensitivity for the first time in a few Tesla applied magnetic field.
References in corpus (18)
- Electronic transport in two dimensional graphene
- The hot pick-up technique for batch assembly of van der Waals heterostructures
- Review of the Low-Frequency 1/f Noise in Graphene Devices
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Cleaning Interfaces in Layered Materials Heterostructures
- Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Robust fractional quantum Hall states and continuous quantum phase transitions in a half-filled bilayer graphene Landau level
- Quantum oscillations of the critical current and high-field superconducting proximity in ballistic graphene
- Fractional fractal quantum Hall effect in graphene superlattices
- Fundamental studies of superconductors using scanning magnetic imaging
- Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
- Micromagnetometry of two-dimensional ferromagnets
- Scanning SQUID susceptometers with sub-micron spatial resolution
- High quality magnetotransport in graphene using the edge-free Corbino geometry
- Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion
- Current crowding mediated large contact noise in graphene field-effect transistors
- Transport in two-dimensional modulation doped semiconductor structures