Transport in two-dimensional modulation doped semiconductor structures

Abstract

We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convincingly that the model of uncorrelated scattering by independent random remote quenched dopant ions is often unable to describe the physical system quantitively. We theoretically establish that the consideration of spatial correlations in the remote dopant distribution can enhance the mobility by (up to) several orders of magnitudes in experimental samples. The precise calculation of the carrier mobility in ultra-pure modulation-doped 2D semiconductor structures thus depends crucially on the unknown spatial correlations among the dopant ions in the doping layer which may manifest sample to sample variations even for nominally identical sample parameters (i.e., density, well width, etc.), depending on the details of the modulation-doping growth conditions.

17 pages, 18 figures

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• Disorder From the Bulk Ionic Liquid in Electric Double Layer Transistors
• Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures
• Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm${}^2$/Vs and beyond
• Density-dependent two-dimensional optimal mobility in ultra-high-quality semiconductor quantum wells
• Weak quantization of non-interacting topological Anderson insulator
• Mobility exceeding 100,000 cm${}^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
• Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs herostructures
• Barrier Electrostatics and Contact Engineering for Ultra-Wide Bandgap AlGaN HFETs
• Universal Fermi-surface anisotropy renormalization for interacting Dirac fermions with long-range interactions
• Limitation of electron mobility from hyperfine interaction in ultra-clean quantum wells and topological insulators
• Valley polarization transition in a two-dimensional electron gas
• Thermal melting of a quantum electron solid in the presence of strong disorder: Anderson versus Wigner