Mobility exceeding 100,000 cm${}^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum

Abstract

The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor, and control over proximity-induced superconductivity are important attributes. Disorder in shallow semiconductor structures plays a crucial role for the stability of putative topological phases in hybrid structures. We report on the transport properties of 2DEGs residing 10nm below the surface in shallow InAs quantum wells in which mobility may exceed 100,000 cm${}^2$/Vs at 2DEG density n${}_{2DEG}$$\le$1$\times$10${}^{12}$cm${}^{-2}$ at low temperature.

arXiv comment11 pages, 10 figures

References in corpus (32)

• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Helical liquids and Majorana bound states in quantum wires
• Scalable Designs for Quasiparticle-Poisoning-Protected Topological Quantum Computation with Majorana Zero Modes
• Epitaxy of Semiconductor-Superconductor nanowires
• Scaling of Majorana Zero-Bias Conductance Peaks
• Weak Antilocalization and Spin Precession in Quantum Wells
• Hard gap in epitaxial semiconductor-superconductor nanowires
• Evidence of topological superconductivity in planar Josephson junctions
• Topological Superconductivity in a Phase-Controlled Josephson Junction
• Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
• Topological Superconductivity in a Planar Josephson Junction
• Physical mechanisms for zero-bias conductance peaks in Majorana nanowires
• Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure
• Phase signature of topological transition in Josephson Junctions
• Induced superconductivity in high mobility two dimensional electron gas in GaAs heterostructures
• Estimating disorder and its adverse effects in semiconductor Majorana nanowires
• Epitaxial Pb on InAs nanowires
• Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well
• Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE
• Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems
• Transport Properties of Near Surface InAs Two-dimensional Heterostructures
• Two-subband quantum Hall effect in parabolic quantum wells
• High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport
• Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
• Transport in two-dimensional modulation doped semiconductor structures
• Multiple Phases with the Same Quantized Hall Conductance in a Two-Subband System
• Mobility in excess of $10^6$ cm${}^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates
• Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
• Tuning supercurrent in Josephson field effect transistors using h-BN dielectric
• Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum
• Improvement of the transport properties of a high-mobility electron system by intentional parallel conductance
• Anodic Oxidation of Epitaxial Superconductor-Semiconductor Hybrids

Cited by in corpus (5)

• Link between supercurrent diode and anomalous Josephson effect revealed by gate-controlled interferometry
• Progress in superconductor-semiconductor topological Josephson junctions
• Making s-wave superconductors topological with magnetic field
• Bound state-continuum resonance transition in a shallow quantum well
• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells