Mobility in excess of $10^6$ cm${}^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates

Abstract

InAs-based two-dimensional electron systems grown on lattice mismatched InP substrates offer a robust platform for the pursuit of topologically protected quantum computing. We investigated strained composite quantum wells of In${}_{0.75}$Ga${}_{0.25}$As/InAs/In${}_{0.75}$Ga${}_{0.25}$As with In${}_{0.75}$Al${}_{0.25}$As barriers. By optimizing the widths of the In${}_{0.75}$Ga${}_{0.25}$As layers, the In${}_{0.75}$Al${}_{0.25}$As barrier, and the InAs quantum well we demonstrate mobility in excess of $1\times 10^6$cm${}^2/$Vs. Mobility vs. density data indicates that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the Rashba parameter and spin-orbit length as important material parameters for investigations involving Majorana zero modes.

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• Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure
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• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
• Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
• Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate