Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect

Abstract

We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm${}^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 $\mu$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.

References in corpus (29)

• Unpaired Majorana fermions in quantum wires
• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Helical liquids and Majorana bound states in quantum wires
• Exponential Protection of Zero Modes in Majorana Islands
• Evidence of topological superconductivity in planar Josephson junctions
• Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
• Zero-Energy Modes from Coalescing Andreev States in a Two-Dimensional Semiconductor-Superconductor Hybrid Platform
• Superconducting Gatemon Qubit based on a Proximitized Two-Dimensional Electron Gas
• Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure
• Transport and elastic scattering times as probes of the nature of impurity scattering in single and bilayer graphene
• Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction
• Phase signature of topological transition in Josephson Junctions
• Highly Tunable Junctions and Nonlocal Josephson Effect in Magic Angle Graphene Tunneling Devices
• Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions
• Superconducting proximity effect in epitaxial Al-InAs heterostructures
• Transport studies of epi-Al/InAs 2DEG systems for required building-blocks in topological superconductor networks
• InSbAs two-dimensional electron gases as a platform for topological superconductivity
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• Two-dimensional electron gas formation in undoped In[0.75]Ga[0.25]As/In[0.75]Al[0.25]As quantum wells
• Transport Properties of Near Surface InAs Two-dimensional Heterostructures
• Two-subband quantum Hall effect in parabolic quantum wells
• Mobility in excess of $10^6$ cm${}^2$/Vs in InAs quantum wells grown on lattice mismatched InP substrates
• Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
• Josephson junctions in narrow thin-film strips
• Josephson inductance as a probe for highly ballistic semiconductor-superconductor weak links
• Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits
• A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
• Effect of nearby Pearl vortices upon the $I_c$ vs $B$ characteristics of planar Josephson junctions in thin and narrow superconducting strips
• Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times 10^{5}c{m}^2/Vs$

Cited by in corpus (4)

• Progress in superconductor-semiconductor topological Josephson junctions
• InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics
• Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics
• Determination of the current-phase relation of an InAs 2DEG Josephson junction with a microwave resonator