InAs on Insulator: A New Platform for Cryogenic Hybrid Superconducting Electronics
arXiv:2405.07630 · doi:10.1002/adfm.202416957
Abstract
Superconducting circuits based on hybrid InAs Josephson Junctions (JJs) play a starring role in the design of fast and ultra-low power consumption solid-state quantum electronics and exploring novel physical phenomena. Conventionally, 3D substrates, 2D quantum wells (QWs), and 1D nanowires (NWs) made of InAs are employed to create superconducting circuits with hybrid JJs. Each platform has its advantages and disadvantages. Here, we proposed the InAs-on-insulator (InAsOI) as a groundbreaking platform for developing superconducting electronics. An epilayer of semiconducting InAs with different electron densities was grown onto an InAlAs metamorphic buffer layer, efficiently used as a cryogenic insulator to decouple adjacent devices electrically. JJs with various lengths and widths were fabricated employing Al as a superconductor and InAs with different electron densities. We achieved a switching current density of 7.3 uA/um, a critical voltage of 50-to-80 uV, and a critical temperature equal to that of the superconductor used. For all the JJs, the switching current follows a characteristic Fraunhofer pattern with an out-of-plane magnetic field. These achievements enable the use of InAsOI to design and fabricate surface-exposed Josephson Field Effect Transistors with high critical current densities and superior gating properties.
19 pages, 4 figures, supporting information at the end of the paper
References in corpus (20)
- Tunable Supercurrent Through Semiconductor Nanowires
- Direct manipulation of a superconducting spin qubit strongly coupled to a transmon qubit
- Josephson Diode Effect in High Mobility InSb Nanoflags
- Proximity DC squids in the long junction limit
- Magnetic Interference Patterns and Vortices in Diffusive SNS junctions
- Gate Tunable Josephson Diode in Proximitized InAs Supercurrent Interferometers
- Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions
- Pb/InAs nanowire Josephson junction with high critical current and magnetic flux focusing
- InAs nanowire hot-electron Josephson transistor
- Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
- Electrostatic tailoring of magnetic interference in quantum point contact ballistic Josephson junctions
- Charge-4e supercurrent in a two-dimensional InAs-Al superconductor-semiconductor heterostructure
- Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum
- Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs
- Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions
- Zeeman and Orbital Driven Phase Transitions in Planar Josephson Junctions
- Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
- A ballistic two-dimensional-electron-gas Andreev interferometer
- Beyond the effective length: How to analyze magnetic interference patterns of thin-film planar Josephson junctions with finite lateral dimensions
- InAs/MoRe hybrid semiconductor/superconductor nanowire devices
Cited by in corpus (7)
- Back-action supercurrent diodes
- Supercurrent Diode Effect in Josephson Interferometers with Multiband Superconductors
- Extremely weak sub-kelvin electron-phonon coupling in InAs On Insulator
- Biharmonic-Drive Tunable Josephson Diode
- Josephson Field Effect Transistors with InAs on Insulator and High Permittivity Gate Dielectrics
- Structural and Transport Properties of Thin InAs Layers Grown on InxAl1-xAs Metamorphic Buffers
- Photonic Negative Differential Thermal Conductance Enabled by NIS Junctions