A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

Abstract

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$-factor.

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Cited by in corpus (7)

• Quantized critical supercurrent in SrTiO${}_3$-based quantum point contacts
• Near-surface InAs 2DEG on a GaAs substrate: characterization and superconducting proximity effect
• Probing strain modulation in a gate-defined one dimensional electron system
• Universal conductance dips and fractional excitations in a two-subband quantum wire
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
• Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)