Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)

Abstract

High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited superconductors. In this work, we investigate InAs/InGaAs quantum wells grown on InP (001) wafers, focusing on how the layer structure and strain influence the electronic properties and surface morphology. By combining quantum transport measurements with atomic force microscopy, we show that the layer design predominantly affects the mobility anisotropy, which aligns well with the surface morphology. Surface characterization further reveals the mechanism of quantum well collapse when the layer thickness exceeds the strain limit. In addition, transport measurements demonstrate that quantum confinement has a clear impact on band nonparabolicity.

7 pages, 6 figures

References in corpus (9)

• Phase-engineering the Andreev band structure of a three-terminal Josephson junction
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction
• Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems
• Observation of fractional quantum Hall effect in an InAs quantum well
• Passivation of Edge States in Etched InAs Sidewalls
• Spin-degeneracy breaking and parity transitions in three-terminal Josephson junctions
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Development of a Nb-based semiconductor-superconductor hybrid platform