54 citations · 201 across the 6 of their papers we have counts for
6 papers
Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
Zijin Lei, Yuze Wu, Christian Reichl +2
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interacti…
Realization of a cascaded quantum system: heralded absorption of a single photon qubit by a single-electron charged quantum dot
Aymeric Delteil, Zhe Sun, Stefan Fält +1
Photonic losses pose a major limitation for implementation of quantum state transfer between nodes of a quantum network. A measurement that heralds successful transfer without reve…
Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices
Luca Sapienza, Jin Liu, Jin Dong Song +4
We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots (density <0.01 um^(-2) capped by a 95 nm Ga…
Scattering mechanisms of highest-mobility InAs/AlGaSb quantum wells
T. Tschirky, S. Mueller, Ch. A. Lehner +4
We study molecular beam epitaxially grown, undoped AlGaSb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highes…
Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells
Christophe Charpentier, Stefan Fält, Christian Reichl +6
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk.…
A nanometer-scale optical electrometer
A. N. Vamivakas, Y. Zhao, S. Falt +3
Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quant…