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cond-mat.mtrl-sci2026
Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
Zijin Lei, Yuze Wu, Christian Reichl +2
High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interacti…
cond-mat.mtrl-sci2016★ 51 cited
Scattering mechanisms of highest-mobility InAs/AlGaSb quantum wells
T. Tschirky, S. Mueller, Ch. A. Lehner +4
We study molecular beam epitaxially grown, undoped AlGaSb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highes…