Observation of fractional quantum Hall effect in an InAs quantum well

Abstract

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermions and parafermions. To attain its full promise, however, the electron system has to be clean enough to exhibit electron-electron interaction phenomena. Here we report the observation of fractional quantum Hall effect in a very low disorder InAs quantum well with a well-width of 24 nm, containing a two-dimensional electron system with a density $n=7.8\times 10^{11}$ cm${}^{-2}$ and low-temperature mobility $1.8\times 10^6$ cm${}^2$/Vs. At a temperature of $\simeq 35$ mK and $B\simeq 24$ T, we observe a deep minimum in the longitudinal resistance, accompanied by a nearly quantized Hall plateau at Landau level filling factor $\nu =4/3$.

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Cited by in corpus (15)

• Transport Properties of Near Surface InAs Two-dimensional Heterostructures
• High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport
• Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
• Progress in superconductor-semiconductor topological Josephson junctions
• A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
• Surface segregation and the Al problem in GaAs quantum wells
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Spatial Mapping of Local Density Variations in Two-dimensional Electron Systems Using Scanning Photoluminescence
• Controlling Fermi level pinning in near-surface InAs quantum wells
• Hidden Quantum Hall Stripes in Al${}_x$Ga${}_{1-x}$As/Al${}_{0.24}$Ga${}_{0.76}$As Quantum Wells
• In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
• High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
• Impact of in-situ controlled disorder screening on fractional quantum Hall effects and composite-fermion transport
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
• Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas