activity
20152019
most citedNon-local transport via edge-states in InAs/GaSb coupled quantum wells

61 citations · 269 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2019★ 15 cited

Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Matija Karalic, Antonio Štrkalj, Michele Masseroni +7

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam spl…

cond-mat.mes-hall2019★ 12 cited

Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

Matija Karalic, Christopher Mittag, Michael Hug +6

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb un…

cond-mat.mes-hall2018★ 10 cited

Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells

Matija Karalic, Christopher Mittag, Susanne Mueller +5

We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-split…

cond-mat.mes-hall2018★ 9 cited

Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells

Christopher Mittag, Matija Karalic, Zijin Lei +4

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduc…

physics.app-ph2017★ 19 cited

Observation of fractional quantum Hall effect in an InAs quantum well

Meng K. Ma, Md. Shafayat Hossain, K. A. Villegas Rosales +4

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermion…

cond-mat.mes-hall2017★ 15 cited

Passivation of Edge States in Etched InAs Sidewalls

Christopher Mittag, Matija Karalic, Susanne Müller +6

We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band be…

cond-mat.mes-hall2017★ 48 cited

Edge transport in InAs and InAs/GaSb quantum wells

Susanne Mueller, Christopher Mittag, Thomas Tschirky +4

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off…

cond-mat.mes-hall2017★ 16 cited

Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well

Matija Karalic, Christopher Mittag, Thomas Tschirky +3

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field…

cond-mat.str-el2016★ 8 cited

On the impact of strain on the electronic properties of InAs/GaSb quantum well systems

Lars Tiemann, Susanne Mueller, Quansheng Wu +6

Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain…

cond-mat.mes-hall2016★ 40 cited

Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells

Matija Karalic, Susanne Mueller, Christopher Mittag +8

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a…

cond-mat.mes-hall2015★ 61 cited

Non-local transport via edge-states in InAs/GaSb coupled quantum wells

Susanne Mueller, Atindra Nath Pal, Matija Karalic +5

We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insul…

cond-mat.mes-hall2015★ 16 cited

Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

Atindra Nath Pal, Susanne Mueller, Thomas Ihn +4

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for…