activity
20152019
most citedEdge transport in InAs and InAs/GaSb quantum wells

48 citations · 110 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2019

Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

Matija Karalic, Antonio Štrkalj, Michele Masseroni +7

Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam spl…

cond-mat.mes-hall201912 cited

Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

Matija Karalic, Christopher Mittag, Michael Hug +6

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb un…

cond-mat.mes-hall2018

Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells

Matija Karalic, Christopher Mittag, Susanne Mueller +5

We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-split…

cond-mat.mes-hall2018

Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells

Christopher Mittag, Matija Karalic, Zijin Lei +4

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduc…

physics.app-ph201719 cited

Observation of fractional quantum Hall effect in an InAs quantum well

Meng K. Ma, Md. Shafayat Hossain, K. A. Villegas Rosales +4

The two-dimensional electron system in an InAs quantum well has emerged as a prime candidate for hosting exotic quasi-particles with non-Abelian statistics such as Majorana fermion…

cond-mat.mes-hall201715 cited

Passivation of Edge States in Etched InAs Sidewalls

Christopher Mittag, Matija Karalic, Susanne Müller +6

We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band be…