Split-Channel Ballistic Transport in an InSb Nanowire

Abstract

We report an experimental study of one-dimensional (1D) electronic transport in an InSb semiconducting nanowire. Three bottom gates are used to locally deplete the nanowire creating a ballistic quantum point contact with only a few conducting channels. In a magnetic field, the Zeeman splitting of the corresponding 1D subbands is revealed by the emergence of conductance plateaus at multiples of $e^2$/h, yet we find a quantized conductance pattern largely dependent on the configuration of voltages applied to the bottom gates. In particular, we can make the first plateau disappear leaving a first conductance step of 2$e^2/h$, which is indicative of a remarkable two-fold subband degeneracy that can persist up to several Tesla. For certain gate voltage settings, we also observe the presence of discrete resonant states producing conductance features that can resemble those expected from the opening of a helical gap in the subband structure. We explain our experimental findings through the formation of two spatially separated 1D conduction channels.

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• Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas
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• Supercurrent through a spin-split quasi-ballistic point contact in an InAs nanowire
• Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
• Renormalization of quantum dot $g$-factor in superconducting Rashba nanowires
• Clock model and parafermions in Rashba nanowires
• Gate-tunable subband degeneracy in semiconductor nanowires
• Universal conductance dips and fractional excitations in a two-subband quantum wire
• Quantized Andreev conductance in semiconductor nanowires
• Electron transport in quantum channels with spin-orbit interaction: Effects of the sign of the Rashba coupling and applications to nanowires
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• Multi-channel scattering mechanism behind the re-entrant conductance feature in nanowires subject to strong spin-orbit coupling
• Enhanced Thermoelectricity in Nanowires with inhomogeneous Helical states
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate