Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas

Abstract

We investigate an electrostatically defined quantum point contact in a high-mobility InSb two-dimensional electron gas. Well-defined conductance plateaus are observed, and the subband structure of the quantum point contact is extracted from finite-bias measurements. The Zeeman splitting is measured in both in-plane and out-of-plane magnetic fields. We find an in-plane g factor $|g_{\parallel }^{\ast }|\approx$ 40. The out-of-plane g factor is measured to be $|g_{\perp }^{\ast }|\approx$ 50, which is close to the g factor in the bulk.

arXiv comment20 pages, 5 figures

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• Half-integer Shapiro steps in highly transmissive InSb nanoflag Josephson junctions
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Tunable superconducting diode effect in higher-harmonic InSb nanosheet interferometers
• Manipulating electron waves in graphene using carbon nanotube gating
• Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Side-gate modulation of supercurrent in InSb nanoflag-based Josephson junctions
• Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot
• Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate