Electronic g-factor and Magneto-transport in InSb Quantum Wells

Abstract

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the coincidence method and the temperature dependence of the Shubnikov-de Haas oscillations and find a value for the effective g-factor of $\mid g^{\ast }\mid$ =35$\pm$4 and a value for the effective mass of $m^{\ast }\approx 0.017m_0$, where $m_0$ is the electron mass in vacuum. Our measurements are performed in a magnetic field and a density range where the enhancement mechanism of the effective g-factor can be neglected. Accordingly, the obtained effective g-factor and the effective mass can be quantitatively explained in a single particle picture. Additionally, we explore the magneto-transport up to magnetic fields of 35 T and do not find features related to the fractional quantum Hall effect.

arXiv comment18 Pages, 5 Figures

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• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• AC Conductance in n-InSb Structures with Quantum Well. Acoustic Studies