AC Conductance in n-InSb Structures with Quantum Well. Acoustic Studies
arXiv:2606.24663 · doi:10.1016/j.physb.2025.418004
Abstract
We studied the ac conductance of an -InSb quantum well structure using acoustic methods in magnetic fields up to 18 T and at temperatures ranging from 20 to 500 mK. We attribute the unusual magnetic field dependences of surface acoustic wave (SAW) attenuation and velocity observed in the experiment to the presence of a conducting layer parallel to the quantum well in the sample. We successfully separated the contributions from both the quantum well and the shunting layer, enabling the identification of their distinct conduction mechanisms. Furthermore, by employing the coincidence technique, we determined the electron g-factor in the quantum well and investigated its dependence on the degree of spin polarization.
7 pages, 9 figures
References in corpus (7)
- InAs-AlSb quantum wells in tilted magnetic fields
- High-frequency hopping conductivity in the quantum Hall effect regime: Acoustical studies
- Nonlinear magnetic field dependence of spin polarization in high density two-dimensional electron systems
- Electronic g-factor and Magneto-transport in InSb Quantum Wells
- Acoustic Studies of AC Conductivity Mechanisms in -GaAs/AlGaAs in the Integer and Fractional Quantum Hall Effect Regime
- High-frequency transport in -type Si/SiGe heterostructures studied with surface acoustic waves in the quantum Hall regime
- Acoustoelectric effects in very high-mobility -SiGe/Ge/SiGe heterostructure at low temperatures in high magnetic fields