A Surface-Gated InSb Quantum Well Single Electron Transistor

Abstract

Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantised confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy is found to be comparable with the energy spectrum for single particle states.

References in corpus (4)

• Driven coherent oscillations of a single electron spin in a quantum dot
• From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
• Charge-qubit operation of an isolated double quantum dot
• Tunable effective g-factor in InAs nanowire quantum dots

Cited by in corpus (7)

• Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
• Quantum transport in high-quality shallow InSb quantum wells
• Stable quantum dots in an InSb two-dimensional electron gas
• Electronic g-factor and Magneto-transport in InSb Quantum Wells
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• A double quantum dot defined by top gates in a single crystalline InSb nanosheet
• Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures