25 citations · 25 across the 1 of their papers we have counts for
5 papers
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Elcin Külah, Christian Reichl, Jan Scharnetzky +3
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…
A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells
J. Scharnetzky, J. M. Meyer, M. Berl +4
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion imp…
Electronic g-factor and Magneto-transport in InSb Quantum Wells
Zijin Lei, Christian A. Lehner, Km Rubi +10
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the…
Quantum transport in high-quality shallow InSb quantum wells
Zijin Lei, Christian A. Lehner, Erik Cheah +7
InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensi…