activity
20192023
most citedQuantum transport in high-quality shallow InSb quantum wells

25 citations · 78 across the 7 of their papers we have counts for

collaborators

7 papers

cond-mat.mes-hall2023

Strongly interacting 2D electron systems: Evidence for enhanced 1D edge-channel coupling

C. Marty, C. Reichl, S. Parolo +4

We observe nearly vanishing Hall resistances for integer filling factors in a counterflow (CF) experiment on a density balanced 2D bilayer system. Filling factor dependent equilibr…

cond-mat.mes-hall2021★ 5 cited

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels

G. Nicoli, C. Adam, M. P. Röösli +6

The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with…

physics.app-ph2021★ 4 cited

Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems

Jan Scharnetzky, Philipp Baumann, Christian Reichl +3

Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…

physics.app-ph2021★ 18 cited

The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems

Elcin Külah, Christian Reichl, Jan Scharnetzky +3

Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…

cond-mat.mes-hall2020★ 6 cited

A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells

J. Scharnetzky, J. M. Meyer, M. Berl +4

The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion imp…

cond-mat.mes-hall2020★ 20 cited

Electronic g-factor and Magneto-transport in InSb Quantum Wells

Zijin Lei, Christian A. Lehner, Km Rubi +10

High mobility InSb quantum wells with tunable carrier densities are investigated by transport experiments in magnetic fields tilted with respect to the sample normal. We employ the…

cond-mat.mes-hall2019★ 25 cited

Quantum transport in high-quality shallow InSb quantum wells

Zijin Lei, Christian A. Lehner, Erik Cheah +7

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensi…