25 citations · 78 across the 7 of their papers we have counts for
3 papers · 1 filter
Spin-Selective Equilibration among Integer Quantum Hall Edge Channels
G. Nicoli, C. Adam, M. P. Röösli +6
The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with…
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Elcin Külah, Christian Reichl, Jan Scharnetzky +3
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…