Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems

Abstract

Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy ion Tellurium creates too many damages in the gallium arsenide to form a conducting layer, both Silicon and Selenium show promising results combined with MBE-grown high-quality 2DEGs. Similar 2DEG mobility compared to non-implanted reference samples is achieved for both Silicon and Selenium implanted structures. Individual contacts to the back-gate are challenging. However, Silicon implanted structures, annealed before the MBE growth, result in a function back-gate, and the electron density of the 2DEG is tuned via the back-gate.

arXiv comment10 pages, 4 figures

References in corpus (4)

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• Observation of quantum Hall interferometer phase jumps due to changing quasiparticle number
• Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
• A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells