Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation

Abstract

We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.

The following article has been submitted to Applied Physics Letters

References in corpus (1)

• Critical tunneling currents in the regime of bilayer excitons

Cited by in corpus (14)

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• Stable Branched Electron Flow
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• Long distance electron-electron scattering detected with point contacts
• A novel planar back-gate design to control the carrier concentrations in GaAs-based double quantum wells
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• Spin-Selective Equilibration among Integer Quantum Hall Edge Channels
• Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
• Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
• Nonlinear response of 2DEG in the quantum Hall regime