4 papers
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
VO2 Nanocrystals for Designer Phase-Change Metamaterials
Jimmy John, Yael Gutierrez, Zhen Zhang +5
Subwavelength nanoparticles can support electromagnetic resonances with distinct features depending on their size, shape and nature. For example, electric and magnetic Mie resonanc…
THz-circuits driven by photo-thermoelectric graphene-junctions
Andreas Brenneis, Felix Schade, Simon Drieschner +4
For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomical…
Ultrafast photocurrents and THz generation in single InAs-nanowires
Nadine Erhard, Paul Seifert, Leonhard Prechtel +5
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectrosco…