Improvement of the transport properties of a high-mobility electron system by intentional parallel conductance

Abstract

We present a gating scheme to separate even strong parallel conductance from the magneto-transport signatures and properties of a two-dimensional electron system. By varying the electron density in the parallel conducting layer, we can study the impact of mobile charge carriers in the vicinity of the dopant layer on the properties of the two-dimensional electron system. It is found that the parallel conducting layer is indeed capable to screen the remote ionized impurity potential fluctuations responsible for the fragility of fractional quantum Hall states.

arXiv comment10 pages, 4 figures

References in corpus (5)

• Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
• $nu=5/2$ Fractional Quantum Hall State in Low-Mobility Electron Systems: Different Roles of Disorder
• Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
• Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
• Measuring carrier density in parallel conduction layers of quantum Hall systems

Cited by in corpus (4)

• Aharonov-Bohm interference of fractional quantum Hall edge modes
• Mobility exceeding 100,000 cm${}^2$/Vs in modulation-doped shallow InAs quantum wells coupled to epitaxial aluminum
• Screening effects of superlattice doping on the mobility of GaAs two-dimensional electron system revealed by in-situ gate control
• Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers