124 citations · 781 across the 35 of their papers we have counts for
35 papers
Strongly interacting 2D electron systems: Evidence for enhanced 1D edge-channel coupling
C. Marty, C. Reichl, S. Parolo +4
We observe nearly vanishing Hall resistances for integer filling factors in a counterflow (CF) experiment on a density balanced 2D bilayer system. Filling factor dependent equilibr…
Josephson-like tunnel resonance and large Coulomb drag in GaAs-based electron-hole bilayers
M. L. Davis, S. Parolo, C. Reichl +2
Bilayers consisting of two-dimensional (2D) electron and hole gases separated by a 10 nm thick AlGaAs barrier are formed by charge accumulation in epitaxially grown GaAs. Both vert…
Controlled generation and detection of a thermal bias in Corbino devices under the quantum Hall regime
Mariano A. Real, Alejandra Tonina, Liliana Arrachea +4
We present an experimental technique to generate and measure a temperature bias in the quantum Hall effect of GaAs/AlGaAs Corbino samples. The bias is generated by injecting an ele…
Capacitance and conductance oscillations from electron tunneling into high energy levels of a quantum well in a p-i-n diode
S. Parolo, M. Lupatini, E. Külah +3
Two-dimensional electron and hole gases separated by a few nm from each other are produced in p-i-n diodes based upon MBE-grown GaAs/AlGaAs heterostructures. At such interlayer dis…
Donor implanted Back-gates in GaAs for MBE-grown highest mobility two-dimensional electron systems
Jan Scharnetzky, Philipp Baumann, Christian Reichl +3
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy…
The improved inverted AlGaAs/GaAs interface: its relevance for high-mobility quantum wells and hybrid systems
Elcin Külah, Christian Reichl, Jan Scharnetzky +3
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is…