Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems

Abstract

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the crystalline quality on the electron transport. Comparing growth on GaSb and GaAs substrates indicates that the structural integrity of our InSb quantum wells is solely determined by the growth conditions at the GaSb/InAlSb transition and the InAlSb barrier growth. The two-dimensional electron gas samples show high mobilities of up to 349 000 cm${}^2$/Vs at cryogenic temperatures and 58 000 cm${}^2$/Vs at room temperature. With the calculated Dingle ratio and a transport lifetime model, ionized impurities predominantly remote from the quantum well are identified as the dominant source of scattering events. The analysis of the well pronounced Shubnikov$-$de Haas oscillations reveals a high spin-orbit coupling with an effective $g$-factor of $-38.4$ in our samples. Along with the smooth surfaces and long mean free paths demonstrated, our InSb quantum wells are increasingly competitive for nanoscale implementations of Majorana mode devices.

arXiv comment14 pages, 9 figures, 4 tables

References in corpus (17)

• Spintronics: Fundamentals and applications
• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Helical liquids and Majorana bound states in quantum wires
• A generic new platform for topological quantum computation using semiconductor heterostructures
• Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
• Majorana fermions in a tunable semiconductor device
• Epitaxy of Semiconductor-Superconductor nanowires
• Two-dimensional epitaxial superconductor-semiconductor heterostructures: A platform for topological superconducting networks
• Epitaxy of Advanced Nanowire Quantum Devices
• Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction
• High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• Observation of Conductance Quantization in InSb Nanowire Networks
• Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
• Stark-Effect Scattering in Rough Quantum Wells
• Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

Cited by in corpus (16)

• InSbAs two-dimensional electron gases as a platform for topological superconductivity
• Landau polaritons in highly non-parabolic 2D gases in the ultra-strong coupling regime
• An ultrastrongly coupled single THz meta-atom
• Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb
• Quantum transport in high-quality shallow InSb quantum wells
• Gate-defined Quantum Point Contact in an InSb Two-dimensional Electron Gas
• Electronic g-factor and Magneto-transport in InSb Quantum Wells
• A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
• Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Measurements of spin-orbit interaction in epitaxially grown InAs nanosheets
• Fabrication and characterization of InSb nanosheet/hBN/graphite heterostructure devices
• Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
• Quantum oscillations in a hexagonal boron nitride-supported single crystalline InSb nanosheet
• Electrically tunable spin-orbit interaction in an InAs nanosheet
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot