Growth and electrical characterization of Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As modulation-doped quantum wells with extremely low x

Abstract

We report on the growth and electrical characterization of modulation-doped Al0.24Ga0.76As/AlxGa1-xAs/Al0.24Ga0.76As quantum wells with mole fractions as low as x=0.00057. Such structures will permit detailed studies of the impact of alloy disorder in the fractional quantum Hall regime. At zero magnetic field, we extract an alloy scattering rate of 24 ns-1 per %Al. Additionally we find that for x as low as 0.00057 in the quantum well, alloy scattering becomes the dominant mobility-limiting scattering mechanism in ultra-high purity two-dimensional electron gases typically used to study the fragile nu=5/2 and nu=12/5 fractional quantum Hall states.

7 pages, 3 figures

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Cited by in corpus (7)

• Limiting scattering processes in high-mobility InSb quantum wells grown on GaSb buffer systems
• Two- and three-electron bubbles in Al${}_x$Ga${}_{1-x}$As/Al${}_{0.24}$Ga${}_{0.76}$As quantum wells
• Isotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas
• Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential
• Hidden Quantum Hall Stripes in Al${}_x$Ga${}_{1-x}$As/Al${}_{0.24}$Ga${}_{0.76}$As Quantum Wells
• Mapping an electron wave function by a local electron scattering probe
• Short and Long Ranged Impurities in Fractional Quantum Hall Systems