Impact of disorder on the 5/2 fractional quantum Hall state

Abstract

We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

PRL 106, 206806 (2011)

References in corpus (6)

• Non-Abelian Anyons and Topological Quantum Computation
• Experimental studies of the fractional quantum Hall effect in the first excited Landau level
• Finite Layer Thickness Stabilizes the Pfaffian State for the 5/2 Fractional Quantum Hall Effect: Wavefunction Overlap and Topological Degeneracy
• Fractional Quantum Hall Effect in the Second Landau Level
• Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
• Interaction-tuned compressible-to-incompressible phase transitions in the quantum Hall systems

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