Evolution of the 7/2 fractional quantum Hall state in two-subband systems
arXiv:1109.1491 · doi:10.1103/PhysRevLett.107.266802
Abstract
We report the evolution of the fractional quantum Hall state (FQHS) at even-denominator filling factor in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt-angle, or symmetry of the charge distribution. When the charge distribution is strongly asymmetric, there is a remarkable persistence of a resistance minimum near when two Landau levels belonging to the two subbands cross at the Fermi energy. The field position of this minimum tracks the 5/2 filling of the symmetric subband, suggesting a pinning of the crossing levels and a developing 5/2 FQHS in the symmetric subband even when the antisymmetric level is partially filled.
References in corpus (8)
- Non-Abelian Anyons and Topological Quantum Computation
- Finite Layer Thickness Stabilizes the Pfaffian State for the 5/2 Fractional Quantum Hall Effect: Wavefunction Overlap and Topological Degeneracy
- Fractional Quantum Hall Effect in the Second Landau Level
- Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
- Orbital Landau level dependence of the fractional quantum Hall effect in quasi-two dimensional electron layers: finite-thickness effects
- Tilt-Induced Anisotropic to Isotropic Phase Transition at
- Impact of disorder on the 5/2 fractional quantum Hall state
- Modulation of bilayer quantum Hall states by tilted-field-induced subband-Landau-level coupling
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