Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
arXiv:0801.3312 · doi:10.1103/PhysRevLett.100.146803
Abstract
The fractional quantum Hall effect is observed at low field, in a regime where the cyclotron energy is smaller than the Coulomb interaction. The nu=5/2 excitation gap is measured to be 262+/-15 mK at ~2.6 T, in good agreement with previous measurements performed on samples with similar mobility, but with electronic density larger by a factor of two. The role of disorder on the nu=5/2 gap is examined. Comparison between experiment and theory indicates that a large discrepancy remains for the intrinsic gap extrapolated from the infinite mobility (zero disorder) limit. In contrast, no such large discrepancy is found for the nu=1/3 Laughlin state. The observation of the nu=5/2 state in the low-field regime implies that inclusion of non-perturbative Landau level mixing may be necessary to better understand the energetics of half-filled fractional quantum hall liquids.
5 pages, 4 figures; typo corrected, comment expanded
References in corpus (3)
Cited by in corpus (34)
- Non-Abelian Anyons and Topological Quantum Computation
- Finite Layer Thickness Stabilizes the Pfaffian State for the 5/2 Fractional Quantum Hall Effect: Wavefunction Overlap and Topological Degeneracy
- Fractional Quantum Hall Hierarchy and the Second Landau Level
- Limit to 2D mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 millions
- Spin polarization of the quantum Hall state
- Shortest Route to Non-Abelian Topological Order on a Quantum Processor
- Orbital Landau level dependence of the fractional quantum Hall effect in quasi-two dimensional electron layers: finite-thickness effects
- Thermopower as a Possible Probe of Non-Abelian Quasiparticle Statistics in Fractional Quantum Hall Liquids
- Recent Experimental Progress of Fractional Quantum Hall Effect: 5/2 Filling State and Graphene
- Contrasting Behavior of the 5/2 and 7/3 Fractional Quantum Hall Effect in a Tilted Field
- Observable Bulk Signatures of Non-Abelian Quantum Hall States
- Ground-state properties of gapped graphene using the random phase approximation
- Quantum Hall Phase Diagram of Half-filled Bilayers in the Lowest and the Second Orbital Landau Levels: Abelian versus Non-Abelian Incompressible Fractional Quantum Hall States
- Mobility versus quality in 2D semiconductor structures
- Abelian and Non-Abelian States in Bilayer Fractional Quantum Hall Systems
- Transport in two-dimensional modulation doped semiconductor structures
- Fractional quantum Hall effects in bilayers in the presence of inter-layer tunneling and charge imbalance
- Increasing the ν = 5 / 2 gap energy: an analysis of MBE growth parameters
- Fractional Quantum Hall Effect in a Diluted Magnetic Semiconductor
- Model for Dissipative Conductance in Fractional Quantum Hall States
- Bilayer mapping of the paired quantum Hall state: Instability toward anisotropic pairing
- Piezo-driven sample rotation system with ultra-low electron temperature
- Valley-dependent 2D transport in Si-MOSFETs
- Impact of the modulation doping layer on the ν=5/2 anisotropy
- An Anomalous Reentrant 5/2 Quantum Hall Phase at Moderate Landau-Level-Mixing Strength
- Fractional quantum Hall effect at the filling factor
- On the zero-field quantization of the anomalous quantum Hall effect in moiré 2D layers
- Fractional Quantum Hall States of the phase in the Second Landau Level
- Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential
- Fermionic symmetry-protected topological state in strained graphene
- Formation of spin droplet at nu = 5/2 in an asymmetric quantum dot under quantum Hall conditions
- Majorana zero modes in semiconductor-superconductor hybrid structures: Defining topology in short and disordered nanowires through Majorana splitting
- Robustness of a state with Ising topological order against local projective measurements
- Competing quantum Hall phases in the second Landau level in low density limit