On the zero-field quantization of the anomalous quantum Hall effect in moiré 2D layers
arXiv:2401.05485 · doi:10.1103/PhysRevB.109.L121104
Abstract
In recent breakthrough experiments, twisted moiré layers of transition metal dichalcogenides are found to manifest both integer (IQAHE) and fractional (FQAHE) quantum anomalous Hall effects in zero applied magnetic field because of the underlying flat band topology and spontaneous breaking of the time reversal invariance. In the current work, we critically analyze the experimental values of the quantized conductance in each case to emphasize the role of disorder in the problem, pointing out that obtaining accurate quantized conductance in future experiments would necessitate better contacts and lower disorder.
arXiv commentUpdated version (including added Fig. 8) to appear in Phys. Rev. B (Letter)
References in corpus (24)
- High temperature fractional quantum Hall states
- Fractional quantum Hall states at zero magnetic field
- Nearly-flat bands with nontrivial topology
- Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer
- Observation of Fractionally Quantized Anomalous Hall Effect
- Fractional quantum Hall effect in the absence of Landau levels
- Fractional Chern Insulator
- Integer and fractional Chern insulators in twisted bilayer MoTe2
- Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
- Topological flat band models with arbitrary Chern numbers
- Spontaneous fractional Chern insulators in transition metal dichalcogenides Moire superlattices
- Fractional quantum anomalous Hall states in twisted bilayer MoTe and WSe
- Anomalous Hall metal and fractional Chern insulator in twisted transition metal dichalcogenides
- Ultra-high quality two-dimensional electron systems
- Excitation gaps in fractional quantum Hall states: An exact diagonalization study
- Composite Fermi Liquid at Zero Magnetic Field in Twisted MoTe
- Zero-field composite Fermi liquid in twisted semiconductor bilayers
- Intrinsic Gap of the nu=5/2 Fractional Quantum Hall State
- Pressure--enhanced fractional Chern insulators in moiré transition metal dichalcogenides along a magic line
- Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to and Impact of Density Fluctuations
- Model for Dissipative Conductance in Fractional Quantum Hall States
- Quantum phases of disordered flatband lattice fractional quantum Hall systems
- Density-dependent two-dimensional optimal mobility in ultra-high-quality semiconductor quantum wells
- Disorder broadening of even denominator fractional quantum Hall states in the presence of a short-range alloy potential
Cited by in corpus (4)
- Variational Mapping of Chern Bands to Landau Levels: Application to Fractional Chern Insulators in Twisted MoTe
- Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers
- Integer and fractional quantum anomalous Hall effects in pentalayer graphene
- Time-dependent conserved operators for autonomous systems and quantization of resistance