Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers
arXiv:2404.03488 · doi:10.1103/PhysRevB.109.245431
Abstract
Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe monolayers [J. Pack, et al., arXiv:2310.19782; A. Y. Joe, et al., Phys. Rev. Lett. 132, 056303 (2024)]. A two-dimensional (2D) metal-insulator transition (MIT) is demonstrated in the Columbia sample at low densities, a regime where the formation of a Wigner crystal (WC) is theoretically anticipated in the absence of disorder. We employ the finite-temperature Boltzmann theory to understand the low-temperature transport properties of monolayer TMDs, taking into account realistic disorder scattering. We analyze the experimental results, focusing on the 2D MIT behavior and the influence of temperature and density on mobility and resistivity in the metallic phase. We provide a discussion of the nontrivial carrier density dependence of our transport results. Our analysis elucidates the linear-in- resistivity in the metallic phase, attributing it to Friedel oscillations associated with screened charged impurities. Furthermore, we explore whether Coulomb disorder could lead to the MIT through either a quantum Anderson localization transition or a classical percolation transition. Our theoretical estimates of the disorder-induced MIT critical densities, although smaller, are within a factor of ~2 of the experimental critical density. We examine the exceptionally high melting temperature ~10 K of WCs observed experimentally in the MoSe systems at low density, an order of magnitude larger than the pristine melting temperature. This suggests that the observed 2D low-density MIT behavior is likely a result of the complex interplay between disorder effects and interaction-driven WC physics, offering a comprehensive understanding of the low-temperature transport phenomena in TMD monolayers.
25 pages, 9 figures
References in corpus (30)
- A self-consistent theory for graphene transport
- Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer
- Observation of Fractionally Quantized Anomalous Hall Effect
- Integer and fractional Chern insulators in twisted bilayer MoTe2
- Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
- Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
- Phase Diagram of the Low-Density Two-Dimensional Homogeneous Electron Gas
- Gate-tunable heavy fermions in a moiré Kondo lattice
- The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
- Mapping twist-tuned multiband topology in bilayer WSe
- Melting of a 2D Quantum Electron Solid in High Magnetic Field
- Direct observation of a magnetic field-induced Wigner crystal
- Transport and percolation in a low-density high-mobility two-dimensional hole system
- Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
- Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System
- Thermal and quantum melting phase diagrams for a magnetic-field-induced Wigner solid
- Density and well width dependences of the effective mass of twodimensional holes in (100) GaAs quantum wells measured by cyclotron resonance at microwave frequencies
- Anisotropic, two-dimensional, disordered Wigner solid
- Probing the Melting of a Two-dimensional Quantum Wigner Crystal via its Screening Efficiency
- A simple model of Coulomb disorder and screening in graphene
- Atomistic -matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
- Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
- Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells
- Density-tuned effective metal-insulator transitions in 2D semiconductor layers: Anderson localization or Wigner crystallization
- Understanding disorder in Silicon quantum computing platforms: Scattering mechanisms in Si/SiGe quantum wells
- Upper bound on the window of density occupied by microemulsion phases in two-dimensional electron systems
- Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder
- Anderson localization crossover in 2D Si systems: The past and the present
- On the zero-field quantization of the anomalous quantum Hall effect in moiré 2D layers
- Apparent Kondo effect in Moiré TMD bilayers: Heavy fermions or disorder?
Cited by in corpus (7)
- Thermal crossover from a Chern insulator to a fractional Chern insulator in pentalayer graphene
- Integer Quantum Hall Effect: Disorder, temperature, floating, and plateau width
- Stability of Wigner crystals and Mott insulators in twisted moiré structures
- Apparent inconsistency between Streda formula and Hall conductivity in reentrant integer quantum anomalous Hall effect in twisted MoTe
- Tuning transport in solid-state Bose-Fermi mixtures by Feshbach resonances
- Bound state-continuum resonance transition in a shallow quantum well
- Impact of spin-orbit coupling on electron correlation corrections to the density of states in anisotropic conductors