Mobility versus quality in 2D semiconductor structures

Abstract

We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or universal indicator of the sample quality in high-mobility modulation-doped 2D GaAs structures because, depending on the specific system property of interest, mobility and quality may be controlled by different aspects of the underlying disorder distribution, particularly since these systems are dominated by long-range Coulomb disorder from both near and far random quenched charged impurities. We show that in the presence of both channel and remote charged impurity scattering, which is a generic situation in modulation-doped high-mobility 2D carrier systems, it is quite possible for higher (lower) mobility structures to have lower (higher) quality as measured by the disorder-induced single-particle level broadening. In particular, we establish that there is no reason to expect a unique relationship between mobility and quality in 2D semiconductor structures as both are independent functionals of the disorder distribution, and are therefore, in principle, independent of each other. Using a simple, but reasonably realistic, ``2-impurity'' minimal model of the disorder distribution, we provide concrete examples of situations where higher (lower) mobilities correspond to lower (higher) sample qualities. We discuss experimental implications of our theoretical results and comment on possible strategies for future improvement of 2D sample quality.

20 pages, 17 figures

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• Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
• Transport in two-dimensional modulation doped semiconductor structures
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• Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to ${\Delta }_{5/2}$ and Impact of Density Fluctuations
• Spinless composite fermions in an ultra-high quality strained Ge quantum well
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• Design rules for modulation-doped AlAs quantum wells
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• Fine structure of high-power microwave-induced resistance oscillations
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• Fractional quantum Hall effect at the filling factor $\nu =5/2$
• Anderson localization crossover in 2D Si systems: The past and the present
• Reducing disorder in Ge quantum wells by using thick SiGe barriers
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• Phase Diagram of Quantum Hall Breakdown and Non-linear Phenomena for InGaAs/InP Quantum Wells
• Apparent Kondo effect in Moiré TMD bilayers: Heavy fermions or disorder?
• Valley polarization transition in a two-dimensional electron gas
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• Dependences of the Transport Scattering Time and Quantum Lifetime on the Two-Dimensional Electron Gas Density in Modulation-Doped Single GaAs Quantum Wells with AlAs/GaAs Short-Period Superlattice Barriers