Anderson localization in doped semiconductors

Abstract

We theoretically consider the problem of doping induced insulator to metal transition in bulk semiconductors by obtaining the transition density as a function of compensation, assuming that the transition is an Anderson localization transition controlled by the Ioffe-Regel-Mott (IRM) criterion. We calculate the mean free path, on the highly doped metallic side, arising from carrier scattering by the ionized dopants, which we model as quenched random charged impurities. The Coulomb disorder of the charged dopants is screened by the carriers themselves, leading to an integral equation for localization, defined by the density-dependent mean free path being equal to the inverse of the Fermi wave number, as dictated by the IRM criterion. Solving this integral equation approximately analytically and exactly numerically, we provide detailed results for the localization critical density for the doping induced metal-insulator transition.

13 pages, 6 figures

References in corpus (5)

• The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
• Metal - Insulator transition in Fe1.01-xCuxSe
• Transport and percolation in a low-density high-mobility two-dimensional hole system
• Mobility versus quality in 2D semiconductor structures
• Anderson localization crossover in 2D Si systems: The past and the present

Cited by in corpus (4)

• Vibrational polariton transport in disordered media
• Integer Quantum Hall Effect: Disorder, temperature, floating, and plateau width
• Single impurity-induced localization transitions in electronic systems
• Probing Electron Localization and Delocalization in the Selective Long-Range Tight-Binding Model