Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure

Abstract

Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^7{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$) are achieved at high densities. A loss of linear gateability is often associated with the highest mobilites, on account of a some residual hopping or parallel conduction in the doped regions. We have developed a method of using fully undoped GaAs-AlGaAs quantum wells, where densities $\approx 6\times 10^{11}{\mathrm{cm}}^{-2}$ can be achieved while maintaining fully linear and non-hysteretic gateability. We use these devices to understand the possible mobility limiting mechanisms at very high densities.

4 pages, 3 eps figures

References in corpus (5)

• Impact of disorder on the 5/2 fractional quantum Hall state
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Gating of high-mobility two-dimensional electron gases in GaAs/AlGaAs heterostructures
• Disappearance of the metal-like behavior in GaAs two-dimensional holes below 30 mK
• Exploration of the Limits to Mobility in Two-Dimensional Hole Systems in GaAs/AlGaAs Quantum Wells

Cited by in corpus (2)

• Semiconductor membranes for electrostatic exciton trapping in optically addressable quantum transport devices
• Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers