133 citations · 268 across the 10 of their papers we have counts for
10 papers
Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
A. Shetty, F. Sfigakis, W. Y. Mak +16
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positiv…
Experimental conditions for observation of electron-hole superfluidity in GaAs heterostructures
Samira Saberi-Pouya, Sara Conti, Andrea Perali +4
The experimental parameter ranges needed to generate superfluidity in optical and drag experiments in GaAs double quantum wells are determined, using a formalism that includes self…
Orientation of hole quantum Hall nematic phases in an out-of-plane electric field
A. F. Croxall, F. Sfigakis, J. Waldie +2
We present observations of an anisotropic resistance state at Landau level filling factor in a two-dimensional hole system (2DHS), which occurs for certain values of hole d…
Electrical control of the Zeeman spin splitting in two-dimensional hole systems
Elizabeth Marcellina, Ashwin Srinivasan, Dmitry Miserev +6
Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensio…
A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs systems
Ugo Siciliani de Cumis, Joanna Waldie, Andrew F. Croxall +5
We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm.…
Switching between attractive and repulsive Coulomb-interaction-mediated drag in an ambipolar GaAs/AlGaAs bilayer device
B. Zheng, A. F. Croxall, J. Waldie +5
We present measurements of Coulomb drag in an ambipolar GaAs/AlGaAs double quantum well structure that can be configured as both an electron-hole bilayer and a hole-hole bilayer, w…